J. Semicond. > 2010, Volume 31 > Issue 8 > 084001
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SEMICONDUCTOR DEVICES

A high-performance enhancement-mode AlGaN/GaN HEMT

Feng Zhihong, Xie Shengyin, Zhou Rui, Yin Jiayun, Zhou Wei and Cai Shujun

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DOI: 10.1088/1674-4926/31/8/084001

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Abstract: An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment. The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1 μ m are 10.3 GHz and 12.5 GHz, respectively, which is comparable with the depletion-mode device. A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.

Key words: enhancement-mode, AlGaN/GaN HEMT, fluorine plasma, threshold voltage

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    Received: 18 August 2015 Revised: 30 March 2010 Online: Published: 01 August 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(8): 084001
      Feng Zhihong, Xie Shengyin, Zhou Rui, Yin Jiayun, Zhou Wei, Cai Shujun. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001 ****Feng Z H, Xie S Y, Zhou R, Yin J Y, Zhou W, Cai S J. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. J. Semicond., 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001.
      Citation:
      Feng Zhihong, Xie Shengyin, Zhou Rui, Yin Jiayun, Zhou Wei, Cai Shujun. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001 ****
      Feng Z H, Xie S Y, Zhou R, Yin J Y, Zhou W, Cai S J. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. J. Semicond., 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001.
      shu

      A high-performance enhancement-mode AlGaN/GaN HEMT

      DOI: 10.1088/1674-4926/31/8/084001

      • National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China

      • National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China

      • Received Date: 2015-08-18
      • Accepted Date: 2010-03-04
      • Revised Date: 2010-03-30
      • Published Date: 2010-07-31

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