Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

Li Zehong; Ren Min; Zhang Bo; Ma Jun; Hu Tao; Zhang Shuai; Wang Fei; Chen Jian

doi:10.1088/1674-4926/31/8/084002

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Li Zehong, Ren Min, Zhang Bo, Ma Jun, Hu Tao, Zhang Shuai, Wang Fei, Chen Jian. Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth[J]. Journal of Semiconductors, 2010, 31(8): 084002. doi: 10.1088/1674-4926/31/8/084002 ****Li Z H, Ren M, Zhang B, Ma J, Hu T, Zhang S, Wang F, Chen J. Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth[J]. J. Semicond., 2010, 31(8): 084002. doi: 10.1088/1674-4926/31/8/084002.

Citation:

Li Zehong, Ren Min, Zhang Bo, Ma Jun, Hu Tao, Zhang Shuai, Wang Fei, Chen Jian. Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth[J]. Journal of Semiconductors, 2010, 31(8): 084002. doi: 10.1088/1674-4926/31/8/084002 ****

Li Z H, Ren M, Zhang B, Ma J, Hu T, Zhang S, Wang F, Chen J. Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth[J]. J. Semicond., 2010, 31(8): 084002. doi: 10.1088/1674-4926/31/8/084002.

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Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

DOI: 10.1088/1674-4926/31/8/084002

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
Shanghai Hua Hong NEC Electronics Company Limited, Shanghai 2012064, China
Shanghai Hua Hong NEC Electronics Company Limited, Shanghai 2012064, China
Shanghai Hua Hong NEC Electronics Company Limited, Shanghai 2012064, China

Received Date: 2015-08-18
Accepted Date: 2010-03-23
Revised Date: 2010-04-15
Published Date: 2010-07-31

Abstract

Abstract

Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts.
- superjunction,
- deep trench etching,
- epitaxial growth,
- power MOSFET

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Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

DOI: 10.1088/1674-4926/31/8/084002

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Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

DOI: 10.1088/1674-4926/31/8/084002

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