Diagram representations of charge pumping processes in CMOS transistors

Huang Xinyun; Jiao Guangfan; Shen Chen; Cao Wei; Huang Daming; Li Mingfu

doi:10.1088/1674-4926/31/8/084003

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Huang Xinyun, Jiao Guangfan, Shen Chen, Cao Wei, Huang Daming, Li Mingfu. Diagram representations of charge pumping processes in CMOS transistors[J]. Journal of Semiconductors, 2010, 31(8): 084003. doi: 10.1088/1674-4926/31/8/084003 ****Huang X Y, Jiao G F, Shen C, Cao W, Huang D M, Li M F. Diagram representations of charge pumping processes in CMOS transistors[J]. J. Semicond., 2010, 31(8): 084003. doi: 10.1088/1674-4926/31/8/084003.

Citation:

Huang Xinyun, Jiao Guangfan, Shen Chen, Cao Wei, Huang Daming, Li Mingfu. Diagram representations of charge pumping processes in CMOS transistors[J]. Journal of Semiconductors, 2010, 31(8): 084003. doi: 10.1088/1674-4926/31/8/084003 ****

Huang X Y, Jiao G F, Shen C, Cao W, Huang D M, Li M F. Diagram representations of charge pumping processes in CMOS transistors[J]. J. Semicond., 2010, 31(8): 084003. doi: 10.1088/1674-4926/31/8/084003.

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Diagram representations of charge pumping processes in CMOS transistors

DOI: 10.1088/1674-4926/31/8/084003

State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China
State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China
SNDL, ECE Department, National University of Singapore, Singapore 117576, Singapore
State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China
State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China
State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China
SNDL, ECE Department, National University of Singapore, Singapore 117576, Singapore

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高校基金

Received Date: 2015-08-18
Accepted Date: 2010-01-07
Revised Date: 2010-03-31
Published Date: 2010-07-31

Abstract

Abstract

A diagram representation method is proposed to interpret the complicated charge pumping (CP) processes. The fast and slow traps in CP measurement are defined. Some phenomena such as CP pulse rise/fall time dependence, frequency dependence, the voltage dependence for the fast and slow traps, and the geometric CP component are clearly illustrated at a glance by the diagram representation. For the slow trap CP measurement, there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture, and the CP current is determined by the lower capturing electron or hole component. The method is used to discuss the legitimacy of the newly developed modified charge pumping method.
- charge pumping

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Diagram representations of charge pumping processes in CMOS transistors

DOI: 10.1088/1674-4926/31/8/084003

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Diagram representations of charge pumping processes in CMOS transistors

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