Diagram representations of charge pumping processes in CMOS transistors

Huang Xinyun; Jiao Guangfan; Shen Chen; Cao Wei; Huang Daming; Li Mingfu

doi:10.1088/1674-4926/31/8/084003

J. Semicond. > 2010, Volume 31 > Issue 8 > 084003

SEMICONDUCTOR DEVICES

Diagram representations of charge pumping processes in CMOS transistors

Huang Xinyun, Jiao Guangfan, Shen Chen, Cao Wei, Huang Daming and Li Mingfu

+ Author Affiliations

DOI: 10.1088/1674-4926/31/8/084003

Abstract: A diagram representation method is proposed to interpret the complicated charge pumping (CP) processes. The fast and slow traps in CP measurement are defined. Some phenomena such as CP pulse rise/fall time dependence, frequency dependence, the voltage dependence for the fast and slow traps, and the geometric CP component are clearly illustrated at a glance by the diagram representation. For the slow trap CP measurement, there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture, and the CP current is determined by the lower capturing electron or hole component. The method is used to discuss the legitimacy of the newly developed modified charge pumping method.

Key words: charge pumping

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Huang Xinyun, Jiao Guangfan, Shen Chen, Cao Wei, Huang Daming, Li Mingfu. Diagram representations of charge pumping processes in CMOS transistors[J]. Journal of Semiconductors, 2010, 31(8): 084003. doi: 10.1088/1674-4926/31/8/084003

Huang X Y, Jiao G F, Shen C, Cao W, Huang D M, Li M F. Diagram representations of charge pumping processes in CMOS transistors[J]. J. Semicond., 2010, 31(8): 084003. doi: 10.1088/1674-4926/31/8/084003.

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Received: 18 August 2015 Revised: 31 March 2010 Online: Published: 01 August 2010

A diagram representation method is proposed to interpret the complicated charge pumping (CP) processes. The fast and slow traps in CP measurement are defined. Some phenomena such as CP pulse rise/fall time dependence, frequency dependence, the voltage dependence for the fast and slow traps, and the geometric CP component are clearly illustrated at a glance by the diagram representation. For the slow trap CP measurement, there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture, and the CP current is determined by the lower capturing electron or hole component. The method is used to discuss the legitimacy of the newly developed modified charge pumping method.

Diagram representations of charge pumping processes in CMOS transistors

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