J. Semicond. > 2010, Volume 31 > Issue 8 > 084005
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SEMICONDUCTOR DEVICES

A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I–V characteristics of a barrier-type thyristor

Li Hairong and Li Siyuan

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DOI: 10.1088/1674-4926/31/8/084005

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Abstract: A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the I–V characteristics of a barrier-type thyristor (BTH) is put forward. The measuring principle and calculation method are given. The BTH samples are experimentally measured and the results are analyzed in detail.

Key words: carrier lifetime, capture cross-section, barrier-type thyristor

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    Received: 18 August 2015 Revised: 24 March 2010 Online: Published: 01 August 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(8): 084005
      Li Hairong, Li Siyuan. A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I–V characteristics of a barrier-type thyristor[J]. Journal of Semiconductors, 2010, 31(8): 084005. doi: 10.1088/1674-4926/31/8/084005 ****Li H R, Li S Y. A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I–V characteristics of a barrier-type thyristor[J]. J. Semicond., 2010, 31(8): 084005. doi: 10.1088/1674-4926/31/8/084005.
      Citation:
      Li Hairong, Li Siyuan. A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I–V characteristics of a barrier-type thyristor[J]. Journal of Semiconductors, 2010, 31(8): 084005. doi: 10.1088/1674-4926/31/8/084005 ****
      Li H R, Li S Y. A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I–V characteristics of a barrier-type thyristor[J]. J. Semicond., 2010, 31(8): 084005. doi: 10.1088/1674-4926/31/8/084005.
      shu

      A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I–V characteristics of a barrier-type thyristor

      DOI: 10.1088/1674-4926/31/8/084005

      • Institute of Microelectronics, Lanzhou University, Lanzhou 730000, China

      • Institute of Microelectronics, Lanzhou University, Lanzhou 730000, China

      • Received Date: 2015-08-18
      • Accepted Date: 2010-02-23
      • Revised Date: 2010-03-24
      • Published Date: 2010-07-31

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