A new integrated SOI power device based on self-isolation technology

Gao Huanmei; Luo Xiaorong; Zhang Wei; Deng Hao; Lei Tianfei

doi:10.1088/1674-4926/31/8/084012

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Gao Huanmei, Luo Xiaorong, Zhang Wei, Deng Hao, Lei Tianfei. A new integrated SOI power device based on self-isolation technology[J]. Journal of Semiconductors, 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012 ****Gao H M, Luo X R, Zhang W, Deng H, Lei T F. A new integrated SOI power device based on self-isolation technology[J]. J. Semicond., 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012.

Citation:

Gao Huanmei, Luo Xiaorong, Zhang Wei, Deng Hao, Lei Tianfei. A new integrated SOI power device based on self-isolation technology[J]. Journal of Semiconductors, 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012 ****

Gao H M, Luo X R, Zhang W, Deng H, Lei T F. A new integrated SOI power device based on self-isolation technology[J]. J. Semicond., 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012.

Citation:

Gao H M, Luo X R, Zhang W, Deng H, Lei T F. A new integrated SOI power device based on self-isolation technology[J]. J. Semicond., 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012.

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A new integrated SOI power device based on self-isolation technology

DOI: 10.1088/1674-4926/31/8/084012

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received Date: 2015-08-18
Accepted Date: 2009-11-20
Revised Date: 2010-03-29
Published Date: 2010-07-31

Abstract

Abstract

A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Furthermore, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μ m, but also modulate the lateral electric field distribution, resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.
- buried n-islands,
- self-isolation,
- breakdown voltage,
- electric field,
- SOI

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A new integrated SOI power device based on self-isolation technology

DOI: 10.1088/1674-4926/31/8/084012

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