Citation: |
Zhou Hailiang, Hao Yue, Zhang Minxuan. Numerical study of the sub-threshold slope in T-CNFETs[J]. Journal of Semiconductors, 2010, 31(9): 094005. doi: 10.1088/1674-4926/31/9/094005
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Zhou H L, Hao Y, Zhang M X. Numerical study of the sub-threshold slope in T-CNFETs[J]. J. Semicond., 2010, 31(9): 094005. doi: 10.1088/1674-4926/31/9/094005.
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Numerical study of the sub-threshold slope in T-CNFETs
doi: 10.1088/1674-4926/31/9/094005
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Abstract
The most attractive merit of tunneling carbon nanotube field effect transistors (T-CNFETs) is the ultra-small inverse sub-threshold slope. In order to obtain as small an average sub-threshold slope as possible, several effective approaches have been proposed based on a numerical insight into the working mechanism of T-CNFETs: tuning the doping level of source/drain leads, minimizing the quantum capacitance value via tuning the bias condition or increasing the insulator capacitance, and adopting a staircase doping strategy in the drain lead. Non-equilibrium Green's function based simulation results show that all these approaches can contribute to a smaller average inverse sub-threshold slope, which is quite desirable in high-frequency or low-power applications.-
Keywords:
- sub-threshold slope,
- T-CNFETs,
- quantum capacitance,
- BTBT,
- NEGF
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References
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Proportional views