Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

Ji Xiaoli; Yang Fuhua; Wang Junxi; Duan Ruifei; Ding Kai; Zeng Yiping; Wang Guohong; Li Jinmin

doi:10.1088/1674-4926/31/9/094009

J. Semicond. > 2010, Volume 31 > Issue 9 > 094009

SEMICONDUCTOR DEVICES

Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

Ji Xiaoli, Yang Fuhua, Wang Junxi, Duan Ruifei, Ding Kai, Zeng Yiping, Wang Guohong and Li Jinmin

+ Author Affiliations

Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

DOI: 10.1088/1674-4926/31/9/094009

Abstract: Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.

Key words: InGaN

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Ji Xiaoli, Yang Fuhua, Wang Junxi, Duan Ruifei, Ding Kai, Zeng Yiping, Wang Guohong, Li Jinmin. Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes[J]. Journal of Semiconductors, 2010, 31(9): 094009. doi: 10.1088/1674-4926/31/9/094009

Ji X L, Yang F H, Wang J X, Duan R F, Ding K, Zeng Y P, Wang G H, Li J M. Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes[J]. J. Semicond., 2010, 31(9): 094009. doi: 10.1088/1674-4926/31/9/094009.

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Received: 18 August 2015 Revised: Online: Published: 01 September 2010

Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.

Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

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Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

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Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

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