Abstract: Pixel image lag in a 4-T CMOS image sensor is analyzed and simulated in a two-dimensional model. Strategies of reducing image lag are discussed from transfer gate channel threshold voltage doping adjustment, PPD N-type doping dose/implant tilt adjustment and transfer gate operation voltage adjustment for signal electron transfer. With the computer analysis tool ISE-TCAD, simulation results show that minimum image lag can be obtained at a pinned photodiode n-type doping dose of 7.0 × 10¹² cm^–2, an implant tilt of –2^o, a transfer gate channel doping dose of 3.0 × 10¹² cm^-2 and an operation voltage of 3.4 V. The conclusions of this theoretical analysis can be a guideline for pixel design to improve the performance of 4-T CMOS image sensors.

Key words: image lag, two-dimensional simulation, doping dose, implant tilt, CMOS image sensor