| Citation: |
Mark N. Lockrey, Matthew R. Phillips. Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system[J]. Journal of Semiconductors, 2011, 32(1): 012001. doi: 10.1088/1674-4926/32/1/012001
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M N Lockrey, M R Phillips. Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system[J]. J. Semicond., 2011, 32(1): 012001. doi: 10.1088/1674-4926/32/1/012001.
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Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system
DOI: 10.1088/1674-4926/32/1/012001
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Abstract
We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence (CL) spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral output across a multi-quantum well sample is measured using the SEM-CL system as well as measuring the efficiency roll-off with increasing carrier concentration. The effects of low energy electron beam modification on the InGaN/GaN multi quantum wells have also been characterized. -
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