
SEMICONDUCTOR PHYSICS
Abstract: The nitride phosphor Sr2Si5N8:Eu2+ was synthesized by the high temperature solid-state method. The properties of Sr2Si5N8:Eu2+ were discussed by X-ray diffraction (XRD) scanning electron microscope (SEM) and spectra analysis. The XRD pattern shows that the single phase produces when strontium nitride is a bit excessive. The SEM photo implies that the excessive strontium nitride works as a flux in the reaction system. The position of emission peak is also located at about 612 nm as strontium nitride is excessive. The luminescent intensity of the phosphor adding excessive strontium nitride is higher than that of the phosphor introducing stoichiometric strontium nitride. The optimized content of nitride strontium was 2.05 mol/mol for the obtained phosphor with excellent properties.
Key words: luminescence, strontium nitride, alkaline earth, white LEDs, rare earth
1 |
Reactive facet of carbon nitride single crystals Kong Liu Journal of Semiconductors, 2020, 41(9): 090202. doi: 10.1088/1674-4926/41/9/090202 |
2 |
Hydride vapor phase epitaxy for gallium nitride substrate Jun Hu, Hongyuan Wei, Shaoyan Yang, Chengming Li, Huijie Li, et al. Journal of Semiconductors, 2019, 40(10): 101801. doi: 10.1088/1674-4926/40/10/101801 |
3 |
Photoluminescence and structural analysis of wurtzite (ZnO)1−x(V2O5)x composite Amjid Iqbal, Arshad Mahmood, Q. Raza, A. Shah, Rashad Rashid, et al. Journal of Semiconductors, 2018, 39(8): 082002. doi: 10.1088/1674-4926/39/8/082002 |
4 |
G. Nagaraju, K. Ravindranatha Reddy, V. Rajagopal Reddy Journal of Semiconductors, 2017, 38(11): 114001. doi: 10.1088/1674-4926/38/11/114001 |
5 |
Advances and prospects in visible light communications Hongda Chen, Chunhui Wu, Honglei Li, Xiongbin Chen, Zongyu Gao, et al. Journal of Semiconductors, 2016, 37(1): 011001. doi: 10.1088/1674-4926/37/1/011001 |
6 |
Jing Wen, Yumei Wen, Ping Li, Sanshan Wang Journal of Semiconductors, 2016, 37(6): 064010. doi: 10.1088/1674-4926/37/6/064010 |
7 |
Rahul Kumar, Ritu Srivastava, Punita Singh Journal of Semiconductors, 2016, 37(1): 013001. doi: 10.1088/1674-4926/37/1/013001 |
8 |
Rahul Kumar, Parag Bhargava, Ritu Srivastava, Priyanka Tyagi Journal of Semiconductors, 2015, 36(6): 064001. doi: 10.1088/1674-4926/36/6/064001 |
9 |
Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening Liu Zike, Gao Wei, Xu Chen, Zou Desu, Qin Yuan, et al. Journal of Semiconductors, 2010, 31(11): 114011. doi: 10.1088/1674-4926/31/11/114011 |
10 |
Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode Ye Zhizhen, Zhang Liqiang, Huang Jingyun, Zhang Yinzhu, Zhu Liping, et al. Journal of Semiconductors, 2009, 30(8): 081001. doi: 10.1088/1674-4926/30/8/081001 |
11 |
Visible photoluminescence of porous silicon covered with an HfON dielectric layer Jiang Ran, Zhang Yan Journal of Semiconductors, 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003 |
12 |
AlGaInP LEDs with surface anti-reflecting structure Chen Yixin, Shen Guangdi, Li Jianjun, Han Jinru, Xu Chen, et al. Journal of Semiconductors, 2009, 30(8): 084009. doi: 10.1088/1674-4926/30/8/084009 |
13 |
Luminescence spectroscopy of ion implanted AlN bulk single crystal Li Weiwei, Zhao Youwen, Dong Zhiyuan, Yang Jun, Hu Weijie, et al. Journal of Semiconductors, 2009, 30(8): 083002. doi: 10.1088/1674-4926/30/8/083002 |
14 |
Improving the Luminescence Efficiency of Power White LEDs with Slurry Li Junfei, Rao Haibo, Hou Bin, Hu Yue, Shen Fahua, et al. Journal of Semiconductors, 2008, 29(5): 984-987. |
15 |
Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices Li Hongjian, Yan Lingling, Huang Baiyun, Yi Danqing, Hu Jin, et al. Chinese Journal of Semiconductors , 2006, 27(1): 30-34. |
16 |
Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, et al. Chinese Journal of Semiconductors , 2006, 27(3): 397-402. |
17 |
Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal Dou Qingping, Chen Zhanguo, Jia Gang, Ma Haitao, Cao Kun, et al. Chinese Journal of Semiconductors , 2006, 27(4): 609-612. |
18 |
Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure Fu Zhuxi, Sun Xiankai, Zhu Junjie, Lin Bixia Chinese Journal of Semiconductors , 2006, 27(2): 239-244. |
19 |
Zhong Xinghua, Zhou Huajie, Lin Gang, Xu Qiuxia Chinese Journal of Semiconductors , 2006, 27(3): 448-453. |
20 |
Measurements of Carrier Confinement at β-FeSi2-Si Heterojunction by Electroluminescence Li Cheng, T. Suemas, F. Hasegawa Chinese Journal of Semiconductors , 2005, 26(2): 230-233. |
Article views: 4593 Times PDF downloads: 2895 Times Cited by: 0 Times
Received: 18 August 2015 Revised: Online: Published: 01 January 2011
Citation: |
Teng Xiaoming, Liang Chao, He Jinhua. Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor[J]. Journal of Semiconductors, 2011, 32(1): 012003. doi: 10.1088/1674-4926/32/1/012003
****
Teng X M, Liang C, He J H. Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor[J]. J. Semicond., 2011, 32(1): 012003. doi: 10.1088/1674-4926/32/1/012003.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2