J. Semicond. > 2011, Volume 32 > Issue 1 > 012003

SEMICONDUCTOR PHYSICS

Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor

Teng Xiaoming, Liang Chao and He Jinhua

+ Author Affiliations
DOI: 10.1088/1674-4926/32/1/012003

PDF

Abstract: The nitride phosphor Sr2Si5N8:Eu2+ was synthesized by the high temperature solid-state method. The properties of Sr2Si5N8:Eu2+ were discussed by X-ray diffraction (XRD) scanning electron microscope (SEM) and spectra analysis. The XRD pattern shows that the single phase produces when strontium nitride is a bit excessive. The SEM photo implies that the excessive strontium nitride works as a flux in the reaction system. The position of emission peak is also located at about 612 nm as strontium nitride is excessive. The luminescent intensity of the phosphor adding excessive strontium nitride is higher than that of the phosphor introducing stoichiometric strontium nitride. The optimized content of nitride strontium was 2.05 mol/mol for the obtained phosphor with excellent properties.

Key words: luminescencestrontium nitridealkaline earthwhite LEDsrare earth

1

Reactive facet of carbon nitride single crystals

Kong Liu

Journal of Semiconductors, 2020, 41(9): 090202. doi: 10.1088/1674-4926/41/9/090202

2

Hydride vapor phase epitaxy for gallium nitride substrate

Jun Hu, Hongyuan Wei, Shaoyan Yang, Chengming Li, Huijie Li, et al.

Journal of Semiconductors, 2019, 40(10): 101801. doi: 10.1088/1674-4926/40/10/101801

3

Photoluminescence and structural analysis of wurtzite (ZnO)1−x(V2O5)x composite

Amjid Iqbal, Arshad Mahmood, Q. Raza, A. Shah, Rashad Rashid, et al.

Journal of Semiconductors, 2018, 39(8): 082002. doi: 10.1088/1674-4926/39/8/082002

4

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

G. Nagaraju, K. Ravindranatha Reddy, V. Rajagopal Reddy

Journal of Semiconductors, 2017, 38(11): 114001. doi: 10.1088/1674-4926/38/11/114001

5

Advances and prospects in visible light communications

Hongda Chen, Chunhui Wu, Honglei Li, Xiongbin Chen, Zongyu Gao, et al.

Journal of Semiconductors, 2016, 37(1): 011001. doi: 10.1088/1674-4926/37/1/011001

6

Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method

Jing Wen, Yumei Wen, Ping Li, Sanshan Wang

Journal of Semiconductors, 2016, 37(6): 064010. doi: 10.1088/1674-4926/37/6/064010

7

Synthesis and electroluminescence characterization of a new aluminum complex,[8-hydroxyquinoline] bis[2, 2'bipyridine] aluminum Al(Bpy)2q

Rahul Kumar, Ritu Srivastava, Punita Singh

Journal of Semiconductors, 2016, 37(1): 013001. doi: 10.1088/1674-4926/37/1/013001

8

Synthesis and electroluminescence properties of tris-[5-choloro-8-hydroxyquinoline] aluminum Al(5-Clq)3

Rahul Kumar, Parag Bhargava, Ritu Srivastava, Priyanka Tyagi

Journal of Semiconductors, 2015, 36(6): 064001. doi: 10.1088/1674-4926/36/6/064001

9

Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening

Liu Zike, Gao Wei, Xu Chen, Zou Desu, Qin Yuan, et al.

Journal of Semiconductors, 2010, 31(11): 114011. doi: 10.1088/1674-4926/31/11/114011

10

Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode

Ye Zhizhen, Zhang Liqiang, Huang Jingyun, Zhang Yinzhu, Zhu Liping, et al.

Journal of Semiconductors, 2009, 30(8): 081001. doi: 10.1088/1674-4926/30/8/081001

11

Visible photoluminescence of porous silicon covered with an HfON dielectric layer

Jiang Ran, Zhang Yan

Journal of Semiconductors, 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003

12

AlGaInP LEDs with surface anti-reflecting structure

Chen Yixin, Shen Guangdi, Li Jianjun, Han Jinru, Xu Chen, et al.

Journal of Semiconductors, 2009, 30(8): 084009. doi: 10.1088/1674-4926/30/8/084009

13

Luminescence spectroscopy of ion implanted AlN bulk single crystal

Li Weiwei, Zhao Youwen, Dong Zhiyuan, Yang Jun, Hu Weijie, et al.

Journal of Semiconductors, 2009, 30(8): 083002. doi: 10.1088/1674-4926/30/8/083002

14

Improving the Luminescence Efficiency of Power White LEDs with Slurry

Li Junfei, Rao Haibo, Hou Bin, Hu Yue, Shen Fahua, et al.

Journal of Semiconductors, 2008, 29(5): 984-987.

15

Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices

Li Hongjian, Yan Lingling, Huang Baiyun, Yi Danqing, Hu Jin, et al.

Chinese Journal of Semiconductors , 2006, 27(1): 30-34.

16

Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys

Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, et al.

Chinese Journal of Semiconductors , 2006, 27(3): 397-402.

17

Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal

Dou Qingping, Chen Zhanguo, Jia Gang, Ma Haitao, Cao Kun, et al.

Chinese Journal of Semiconductors , 2006, 27(4): 609-612.

18

Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure

Fu Zhuxi, Sun Xiankai, Zhu Junjie, Lin Bixia

Chinese Journal of Semiconductors , 2006, 27(2): 239-244.

19

A High Performance Sub-100nm Nitride/Oxynitride Stack Gate Dielectric CMOS Device with Refractory W/TiN Metal Gates

Zhong Xinghua, Zhou Huajie, Lin Gang, Xu Qiuxia

Chinese Journal of Semiconductors , 2006, 27(3): 448-453.

20

Measurements of Carrier Confinement at β-FeSi2-Si Heterojunction by Electroluminescence

Li Cheng, T. Suemas, F. Hasegawa

Chinese Journal of Semiconductors , 2005, 26(2): 230-233.

  • Search

    Advanced Search >>

    GET CITATION

    张利春, 高玉芝, 宁宝俊, 张录, 王阳元. 氮离子注入对GaAs肖特基势垒性能影响的研究[J]. 半导体学报(英文版), 1990, 11(12): 966-968.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4593 Times PDF downloads: 2895 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 January 2011

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      张利春, 高玉芝, 宁宝俊, 张录, 王阳元. 氮离子注入对GaAs肖特基势垒性能影响的研究[J]. 半导体学报(英文版), 1990, 11(12): 966-968.
      Citation:
      Teng Xiaoming, Liang Chao, He Jinhua. Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor[J]. Journal of Semiconductors, 2011, 32(1): 012003. doi: 10.1088/1674-4926/32/1/012003 ****
      Teng X M, Liang C, He J H. Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor[J]. J. Semicond., 2011, 32(1): 012003. doi: 10.1088/1674-4926/32/1/012003.

      Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor

      DOI: 10.1088/1674-4926/32/1/012003
      • Received Date: 2015-08-18

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return