| Citation: |
Sanjoy Deb, Saptarsi Ghosh, N Basanta Singh, A K De, Subir Kumar Sarkar. A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs[J]. Journal of Semiconductors, 2011, 32(10): 104001. doi: 10.1088/1674-4926/32/10/104001
****
S Deb, S Ghosh, N B Singh, A K De, S K Sarkar. A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs[J]. J. Semicond., 2011, 32(10): 104001. doi: 10.1088/1674-4926/32/10/104001.
|
A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs
DOI: 10.1088/1674-4926/32/10/104001
-
Abstract
A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs. Different short channel field effects, such as fringing fields, junction-induced lateral fields and substrate fields, are carefully investigated, and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model. Through analytical model-based simulation, the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations. Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model. The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET. The short channel effects are found to be reduced in an SON, thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope. This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] -
Proportional views
DownLoad: