A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

Sanjoy Deb; Saptarsi Ghosh; N Basanta Singh; A K De; Subir Kumar Sarkar

doi:10.1088/1674-4926/32/10/104001

J. Semicond. > 2011, Volume 32 > Issue 10 > 104001

SEMICONDUCTOR DEVICES

A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

Sanjoy Deb, Saptarsi Ghosh, N Basanta Singh, A K De and Subir Kumar Sarkar

+ Author Affiliations

DOI: 10.1088/1674-4926/32/10/104001

Abstract: A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs. Different short channel field effects, such as fringing fields, junction-induced lateral fields and substrate fields, are carefully investigated, and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model. Through analytical model-based simulation, the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations. Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model. The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET. The short channel effects are found to be reduced in an SON, thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope. This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.

Key words: silicon-on-insulator, silicon-on-nothing, Poisson’s equation, short channel effects, threshold voltage roll-off, subthreshold slope

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Received: 03 December 2014 Revised: 13 June 2011 Online: Published: 01 October 2011

A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs. Different short channel field effects, such as fringing fields, junction-induced lateral fields and substrate fields, are carefully investigated, and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model. Through analytical model-based simulation, the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations. Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model. The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET. The short channel effects are found to be reduced in an SON, thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope. This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.

A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

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