J. Semicond. > 2011, Volume 32 > Issue 11 > 112002

SEMICONDUCTOR PHYSICS

Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells

Zhu Jun, Ban Shiliang and Ha Sihua

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DOI: 10.1088/1674-4926/32/11/112002

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Abstract: The properties of polarons in zinc-blende and wurtzite GaN/AlN quantum wells with Fröhlich interaction Hamiltonians are compared in detail. The energy shifts of polarons at ground state due to the interface (IF), confined (CO) and half-space phonon modes are calculated by a finite-difference computation combined with a modified LLP variational method. It is found that the two Fröhlich interaction Hamiltonians are consistent with each other when the anisotropic effect from the z-direction and the x-y plane is neglected. The influence of the anisotropy on the polaron energy shifts due to the IF phonon modes for a smaller well width or due to the CO phonon modes for a moderate well width is obvious. In addition, the built-in electric field has a remarkable effect on the polaron energy shifts contributed by the various phonon modes.

Key words: polaronquantum wellanisotropic effect

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    Zhu Jun, Ban Shiliang, Ha Sihua. Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells[J]. Journal of Semiconductors, 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002
    Zhu J, Ban S L, Ha S H. Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells[J]. J. Semicond., 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002.
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    Received: 03 December 2014 Revised: 12 July 2011 Online: Published: 01 November 2011

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      Zhu Jun, Ban Shiliang, Ha Sihua. Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells[J]. Journal of Semiconductors, 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002 ****Zhu J, Ban S L, Ha S H. Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells[J]. J. Semicond., 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002.
      Citation:
      Zhu Jun, Ban Shiliang, Ha Sihua. Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells[J]. Journal of Semiconductors, 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002 ****
      Zhu J, Ban S L, Ha S H. Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells[J]. J. Semicond., 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002.

      Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells

      DOI: 10.1088/1674-4926/32/11/112002
      • Received Date: 2014-12-03
      • Accepted Date: 2011-01-21
      • Revised Date: 2011-07-12
      • Published Date: 2011-10-20

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