| Citation: |
Zou Liner, Wang Gouri, Shen Yun, Chen Baoxue, Mamoru Iso. As2S8 planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features[J]. Journal of Semiconductors, 2011, 32(11): 112004. doi: 10.1088/1674-4926/32/11/112004
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Zou L E, Wang G R, Shen Y, Chen B X, M Iso. As2S8 planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features[J]. J. Semicond., 2011, 32(11): 112004. doi: 10.1088/1674-4926/32/11/112004.
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As2S8 planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features
DOI: 10.1088/1674-4926/32/11/112004
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Abstract
The refractive index of as-evaporated amorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible. Upon successive treatment with annealing and non-saturation irradiation and further annealing, the refractive index of the as-evaporated amorphous semiconductor As2S8 film reaches a maximum value and then its reversibility occurs upon annealing. The annealing of the amorphous semiconductor As2S8 films results in the stabilization of the structure through changes of the S-S bonds in the nearest environment, accompanied by a decrease of film thickness. The As2S8 planar waveguide after annealing (130 ℃) and saturation irradiation and annealing (130 ℃) shows a good propagation characteristic with ca. 0.27 dB/cm low propagation loss of the 632.8 nm guided mode. -
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