Abstract: Low-frequency and high-frequency Capacitance-Voltage (C-V) curves of Metal-Oxide-Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C_ox to > 10C_ox. Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N_DD, the ground state electron trapping energy level depth measured from the conduction band edge, E_C-E_D, the degeneracy of the trapped electron at the ground state, g_D, the device temperature, T, and the gate oxide thickness, x_ox.

Key words: trapping capacitance, donor dopant impurity, electron trap, MOS