A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

Liu Bo; Feng Zhihong; Zhang Sen; Dun Shaobo; Yin Jiayun; Li Jia; Wang Jingjing; Zhang Xiaowei; Fang Yulong; Cai Shujun

doi:10.1088/1674-4926/32/12/124003

J. Semicond. > 2011, Volume 32 > Issue 12 > 124003

SEMICONDUCTOR DEVICES

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

Liu Bo, Feng Zhihong, Zhang Sen, Dun Shaobo, Yin Jiayun, Li Jia, Wang Jingjing, Zhang Xiaowei, Fang Yulong and Cai Shujun

+ Author Affiliations

DOI: 10.1088/1674-4926/32/12/124003

Abstract: We report high performance InAlN/GaN HEMTs grown on sapphire substrates. The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm²/(V·s) under a sheet density of 2.6 × 10¹³ cm^-2. Large signal load-pull measurements for a (2 × 100 μm) × 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InAlN/GaN HEMTs in mainland China.

Key words: InAlN/GaN

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8	MOCVD epitaxy of InAlN on different templates Yun Lijun, Wei Tongbo, Yan Jianchang, Liu Zhe, Wang Junxi, et al. Journal of Semiconductors, 2011, 32(9): 093001. doi: 10.1088/1674-4926/32/9/093001
9	Characteristics of GaN grown on 6H-SiC with different AlN buffers Ding Guojian, Guo Liwei, Xing Zhigang, Chen Yao, Xu Peiqiang, et al. Journal of Semiconductors, 2010, 31(3): 033003. doi: 10.1088/1674-4926/31/3/033003
10	High quality AlGaN grown on a high temperature AlN template by MOCVD Yan Jianchang, Wang Junxi, Liu Naixin, Liu Zhe, Ruan Jun, et al. Journal of Semiconductors, 2009, 30(10): 103001. doi: 10.1088/1674-4926/30/10/103001
11	Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures Duan Huantao, Hao Yue, Zhang Jincheng Journal of Semiconductors, 2009, 30(9): 093001. doi: 10.1088/1674-4926/30/9/093001
12	A Solar-Blind AlGaN-Based p-i-n Back-Illuminated Photodetector with a High Temperature AlN Template Layer Zou Zeya, Yang Mohua, Liu Ting, Zhao Wenbo, Zhao Hong, et al. Journal of Semiconductors, 2008, 29(1): 20-23.
13	Growth of p-GaN on High-Temperature AlN Templates Liu Ting, Zou Zeya, Wang Zhen, Zhao Hong, Zhao Wenbo, et al. Journal of Semiconductors, 2008, 29(1): 128-132.
14	Growth and Stress Analysis of a-Plane GaN Films Grown on r-Plane Sapphire Substrate with a Two-Step AlN Buffer Layer Yan Jianfeng, Zhang Jie, Guo Liwei, Zhu Xueliang, Peng Mingzeng, et al. Chinese Journal of Semiconductors , 2007, 28(10): 1562-1567.
15	Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer Ma Zhiyong, Wang Xiaoliang, Hu Guoxin, Xiao Hongling, Wang Cuimei, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 3944-3943.
16	Strain Distribution and Piezoelectric Effect in GaN/AlN Quantum Dots Liang Shuang, Lu Yanwu Chinese Journal of Semiconductors , 2007, 28(1): 42-46.
17	Study of Sublimation Crystal Growth of Bulk AlN Zhao Youwen, Dong Zhiyuan, Wei Xuecheng, Duan Manlong, Li Jinmin, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1241-1245.
18	MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, et al. Chinese Journal of Semiconductors , 2006, 27(9): 1521-1525.
19	Correlations Between an AlN Insert Layer and Current Collapse in AlGaN/GaN HEMTs Li Chengzhan, Liu Jian, Liu Xinyu, Xue Lijun, Chen Xiaojuan, et al. Chinese Journal of Semiconductors , 2006, 27(6): 1055-1058.
20	Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2396-2400.

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Liu Bo, Feng Zhihong, Zhang Sen, Dun Shaobo, Yin Jiayun, Li Jia, Wang Jingjing, Zhang Xiaowei, Fang Yulong, Cai Shujun. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate[J]. Journal of Semiconductors, 2011, 32(12): 124003. doi: 10.1088/1674-4926/32/12/124003

Liu B, Feng Z H, Zhang S, Dun S B, Yin J Y, Li J, Wang J J, Zhang X W, Fang Y L, Cai S J. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate[J]. J. Semicond., 2011, 32(12): 124003. doi: 10.1088/1674-4926/32/12/124003.

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Received: 20 August 2015 Revised: 21 June 2011 Online: Published: 01 December 2011

We report high performance InAlN/GaN HEMTs grown on sapphire substrates. The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm²/(V·s) under a sheet density of 2.6 × 10¹³ cm^-2. Large signal load-pull measurements for a (2 × 100 μm) × 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InAlN/GaN HEMTs in mainland China.

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

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