| Citation: |
Yang Xiaonan, Wang Yong, Zhang Manhong, Huo Zongliang, Liu Jing, Zhang Bo, Liu Ming. A novel 2-T structure memory device using a Si nanodot for embedded application[J]. Journal of Semiconductors, 2011, 32(12): 124007. doi: 10.1088/1674-4926/32/12/124007
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Yang X N, Wang Y, Zhang M H, Huo Z L, Liu J, Zhang B, Liu M. A novel 2-T structure memory device using a Si nanodot for embedded application[J]. J. Semicond., 2011, 32(12): 124007. doi: 10.1088/1674-4926/32/12/124007.
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A novel 2-T structure memory device using a Si nanodot for embedded application
doi: 10.1088/1674-4926/32/12/124007
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Abstract
Performance and reliability of a 2 transistor Si nanocrystal nonvolatile memory (NVM) are investigated. A good performance of the memory cell has been achieved, including a fast program/erase (P/E) speed under low voltages, an excellent data retention (maintaining for 10 years) and good endurance with a less threshold voltage shift of less than 10% after 104 P/E cycles. The data show that the device has strong potential for future embedded NVM applications.-
Keywords:
- nonvolatile memory
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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