| Citation: |
Guo Jiarong, Ran Feng. A new low-voltage and high-speed sense amplifier for flash memory[J]. Journal of Semiconductors, 2011, 32(12): 125003. doi: 10.1088/1674-4926/32/12/125003
****
Guo J R, Ran F. A new low-voltage and high-speed sense amplifier for flash memory[J]. J. Semicond., 2011, 32(12): 125003. doi: 10.1088/1674-4926/32/12/125003.
|
A new low-voltage and high-speed sense amplifier for flash memory
doi: 10.1088/1674-4926/32/12/125003
-
Abstract
A new low-voltage and high-speed sense amplifier is presented, based on a very simple direct current-mode comparison. It adopts low-voltage reference current extraction and a dynamic output method to realize its performance indicators such as low voltage, low power and high precision. The proposed amplifier can sense a 0.5 μ A current gap and work with a lowest voltage of 1 V. In addition, the current power of a single amplifier is optimized by 15%.-
Keywords:
- flash memory,
- sense amplifier,
- current-mode,
- low-voltage
-
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] -
Proportional views
DownLoad: