SEMICONDUCTOR DEVICES
Zhang Chenfei, Ma Chenyue, Guo Xinjie, Zhang Xiufang, He Jin, Wang Guozeng, Yang Zhang and Liu Zhiwei
Abstract: The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination--generation (R--G) current are derived from the device physics. Then the peak R--G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.
Key words: forward gated-diode method
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Received: 18 August 2015 Revised: 09 September 2010 Online: Published: 01 February 2011
| Citation: |
Zhang Chenfei, Ma Chenyue, Guo Xinjie, Zhang Xiufang, He Jin, Wang Guozeng, Yang Zhang, Liu Zhiwei. Forward gated-diode method for parameter extraction of MOSFETs[J]. Journal of Semiconductors, 2011, 32(2): 024001. doi: 10.1088/1674-4926/32/2/024001
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Zhang C F, Ma C Y, Guo X J, Zhang X F, He J, Wang G Z, Yang Z, Liu Z W. Forward gated-diode method for parameter extraction of MOSFETs[J]. J. Semicond., 2011, 32(2): 024001. doi: 10.1088/1674-4926/32/2/024001.
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