Citation: |
Zhou Jianhua, Gao Minghui, S. K. Pang, Zou Shichang. Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect[J]. Journal of Semiconductors, 2011, 32(2): 024003. doi: 10.1088/1674-4926/32/2/024003
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Zhou J H, Gao M H, S. K. Pang, Zou S C. Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect[J]. J. Semicond., 2011, 32(2): 024003. doi: 10.1088/1674-4926/32/2/024003.
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Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect
DOI: 10.1088/1674-4926/32/2/024003
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Abstract
As SOI-CMOS technology nodes reach the tens of nanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed. -
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