J. Semicond. > 2011, Volume 32 > Issue 2 > 024009

SEMICONDUCTOR DEVICES

Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface

Wang Liancheng, Guo Enqing, Liu Zhiqiang, Yi Xiaoyan and Wang Guohong

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DOI: 10.1088/1674-4926/32/2/024009

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Abstract: Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.

Key words: metallization contactswet etchingsurface roughening

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    Wang Liancheng, Guo Enqing, Liu Zhiqiang, Yi Xiaoyan, Wang Guohong. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. Journal of Semiconductors, 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009
    Wang L C, Guo E Q, Liu Z Q, Yi X Y, Wang G H. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. J. Semicond., 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009.
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    Received: 18 August 2015 Revised: 14 September 2010 Online: Published: 01 February 2011

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      Wang Liancheng, Guo Enqing, Liu Zhiqiang, Yi Xiaoyan, Wang Guohong. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. Journal of Semiconductors, 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009 ****Wang L C, Guo E Q, Liu Z Q, Yi X Y, Wang G H. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. J. Semicond., 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009.
      Citation:
      Wang Liancheng, Guo Enqing, Liu Zhiqiang, Yi Xiaoyan, Wang Guohong. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. Journal of Semiconductors, 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009 ****
      Wang L C, Guo E Q, Liu Z Q, Yi X Y, Wang G H. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. J. Semicond., 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009.

      Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface

      DOI: 10.1088/1674-4926/32/2/024009
      • Received Date: 2015-08-18
      • Accepted Date: 2010-08-09
      • Revised Date: 2010-09-14
      • Published Date: 2011-01-10

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