Citation: |
Wang Liancheng, Guo Enqing, Liu Zhiqiang, Yi Xiaoyan, Wang Guohong. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. Journal of Semiconductors, 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009
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Wang L C, Guo E Q, Liu Z Q, Yi X Y, Wang G H. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. J. Semicond., 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009.
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Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface
DOI: 10.1088/1674-4926/32/2/024009
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Abstract
Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.-
Keywords:
- metallization contacts,
- wet etching,
- surface roughening
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References
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Proportional views