| Citation: |
Zuo Zewen, Guan Wentian, Xin Yu, Lü Jin, Wang Junzhuan, Pu Lin, Shi Yi, Zheng Youdou. Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD[J]. Journal of Semiconductors, 2011, 32(3): 032001. doi: 10.1088/1674-4926/32/3/032001
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Zuo Z W, Guan W T, Xin Y, Lü J, Wang J Z, Pu L, Shi Y, Zheng Y D. Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD[J]. J. Semicond., 2011, 32(3): 032001. doi: 10.1088/1674-4926/32/3/032001.
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Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD
DOI: 10.1088/1674-4926/32/3/032001
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Abstract
Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality. The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors. The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.-
Keywords:
- microcrystalline silicon,
- jet-ICPCVD,
- high rate,
- convective transfer
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References
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Proportional views
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