Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD

Zuo Zewen; Guan Wentian; Xin Yu; Lü Jin; Wang Junzhuan; Pu Lin; Shi Yi; Zheng Youdou

doi:10.1088/1674-4926/32/3/032001

J. Semicond. > 2011, Volume 32 > Issue 3 > 032001

SEMICONDUCTOR PHYSICS

Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD

Zuo Zewen, Guan Wentian, Xin Yu, Lü Jin, Wang Junzhuan, Pu Lin, Shi Yi and Zheng Youdou

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DOI: 10.1088/1674-4926/32/3/032001

Abstract: Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality. The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors. The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.

Key words: microcrystalline silicon, jet-ICPCVD, high rate, convective transfer

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Zuo Zewen, Guan Wentian, Xin Yu, Lü Jin, Wang Junzhuan, Pu Lin, Shi Yi, Zheng Youdou. Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD[J]. Journal of Semiconductors, 2011, 32(3): 032001. doi: 10.1088/1674-4926/32/3/032001

Zuo Z W, Guan W T, Xin Y, Lü J, Wang J Z, Pu L, Shi Y, Zheng Y D. Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD[J]. J. Semicond., 2011, 32(3): 032001. doi: 10.1088/1674-4926/32/3/032001.

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Received: 18 August 2015 Revised: 09 October 2010 Online: Published: 01 March 2011

Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality. The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors. The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.

Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD

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Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD

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