| Citation: |
Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, Xiao Hongling, Li Jing, Li Jinmin. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002
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Yin H B, Wang X L, Ran J X, Hu G X, Zhang L, Xiao H L, Li J, Li J M. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. J. Semicond., 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002.
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High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
DOI: 10.1088/1674-4926/32/3/033002
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Abstract
A homemade 7 × 2 inch MOCVD system is presented. With this system, high quality GaN epitaxial layers, InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%. Using the LED structural epitaxial layers, blue LED chips with area of 350 × 350 μm2 were fabricated. Under 20 mA injection current, the optical output power of the blue LED is 8.62 mW.-
Keywords:
- MOCVD
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References
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Proportional views
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