J. Semicond. > 2011, Volume 32 > Issue 3 > 033003

SEMICONDUCTOR MATERIALS

Removal of impurities from metallurgical grade silicon by electron beam melting

Luo Dawei, Liu Ning, Lu Yiping, Zhang Guoliang and Li Tingju

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DOI: 10.1088/1674-4926/32/3/033003

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Abstract: Solar cells are currently fabricated from a variety of silicon-based materials. Now the major silicon material for solar cells is the scrap of electronic grade silicon (EG-Si). But in the current market it is difficult to secure a steady supply of this material. Therefore, alternative production processes are needed to increase the feedstock. In this paper, EBM is used to purify silicon. MG-Si particles after leaching with an initial purity of 99.88% in mass as starting materials were used. The final purity of the silicon disk obtained after EBM was above 99.995% in mass. This result demonstrates that EBM can effectively remove impurities from silicon. This paper mainly studies the impurity distribution in the silicon disk after EBM.

Key words: silicon refiningelectron beam meltingmetallurgical grade siliconsolar grade silicon

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    Luo Dawei, Liu Ning, Lu Yiping, Zhang Guoliang, Li Tingju. Removal of impurities from metallurgical grade silicon by electron beam melting[J]. Journal of Semiconductors, 2011, 32(3): 033003. doi: 10.1088/1674-4926/32/3/033003
    Luo D W, Liu N, Lu Y P, Zhang G L, Li T J. Removal of impurities from metallurgical grade silicon by electron beam melting[J]. J. Semicond., 2011, 32(3): 033003. doi: 10.1088/1674-4926/32/3/033003.
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    Received: 18 August 2015 Revised: 15 October 2010 Online: Published: 01 March 2011

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      Luo Dawei, Liu Ning, Lu Yiping, Zhang Guoliang, Li Tingju. Removal of impurities from metallurgical grade silicon by electron beam melting[J]. Journal of Semiconductors, 2011, 32(3): 033003. doi: 10.1088/1674-4926/32/3/033003 ****Luo D W, Liu N, Lu Y P, Zhang G L, Li T J. Removal of impurities from metallurgical grade silicon by electron beam melting[J]. J. Semicond., 2011, 32(3): 033003. doi: 10.1088/1674-4926/32/3/033003.
      Citation:
      Luo Dawei, Liu Ning, Lu Yiping, Zhang Guoliang, Li Tingju. Removal of impurities from metallurgical grade silicon by electron beam melting[J]. Journal of Semiconductors, 2011, 32(3): 033003. doi: 10.1088/1674-4926/32/3/033003 ****
      Luo D W, Liu N, Lu Y P, Zhang G L, Li T J. Removal of impurities from metallurgical grade silicon by electron beam melting[J]. J. Semicond., 2011, 32(3): 033003. doi: 10.1088/1674-4926/32/3/033003.

      Removal of impurities from metallurgical grade silicon by electron beam melting

      DOI: 10.1088/1674-4926/32/3/033003
      • Received Date: 2015-08-18
      • Accepted Date: 2010-08-30
      • Revised Date: 2010-10-15
      • Published Date: 2011-02-23

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