
SEMICONDUCTOR MATERIALS
Qiu Feng, Xiang Jinzhong, Kong Jincheng, Yu Lianjie, Kong Lingde, Wang Guanghua, Li Xiongjun, Yang Lili, Li Cong and Ji Rongbin
Abstract: This paper reports the dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films deposited on an Al2O3 substrate by RF magnetron sputtering. It is determined that dark conduction activation energy is 0.417 eV for the as-grown sample. Thermal quenching is absent for the as-grown sample during the testing temperature zone, but the reverse is true for the polycrystalline sample. Photosensitivity shows the maximum at 240 K for amorphous thin films, while it is higher for the as-grown sample than for polycrystalline thin films in the range from 170 to 300 K. The recombination mechanism is the monomolecular recombination process at room temperature, which is different from the low temperature range. The μτ-product is low in the range of 10-11–10-9 cm2/V, which indicates that some defect states exist in the amorphous thin films.
Key words: amorphous MCT, dark conductivity, photoconductivity
1 |
Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures Mikhail K. Sotnichuk, Anton V. Ikonnikov, Dmitry R. Khokhlov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, et al. Journal of Semiconductors, 2025, 46(4): 042702. doi: 10.1088/1674-4926/24090023 |
2 |
Ahmad A. Ahmad, Qais M. Al-Bataineh, Ahmad B. Migdadi Journal of Semiconductors, 2024, 45(11): 112701. doi: 10.1088/1674-4926/24060019 |
3 |
Multiframe-integrated, in-sensor computing using persistent photoconductivity Xiaoyong Jiang, Minrui Ye, Yunhai Li, Xiao Fu, Tangxin Li, et al. Journal of Semiconductors, 2024, 45(9): 092401. doi: 10.1088/1674-4926/24040002 |
4 |
Kaour Selma, Benkara Salima, Bouabida Seddik, Rechem Djamil, Hadjeris Lazhar, et al. Journal of Semiconductors, 2023, 44(3): 032801. doi: 10.1088/1674-4926/44/3/032801 |
5 |
Zhijie Wang Journal of Semiconductors, 2019, 40(1): 010201. doi: 10.1088/1674-4926/40/1/010201 |
6 |
A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact Mengxuan Jiang, Z. John Shen, Jun Wang, Xin Yin, Zhikang Shuai, et al. Journal of Semiconductors, 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011 |
7 |
Persistent photoconductivity of amorphous Hg0.78Cd0.22Te: In films* Lianjie Yu, Yuhui Su, Yanli Shi, Xiongjun Li, Weiyan Zhao, et al. Journal of Semiconductors, 2016, 37(10): 103003. doi: 10.1088/1674-4926/37/10/103003 |
8 |
Yongye Liang, Kyungsoo Jang, S. Velumani, Cam Phu Thi Nguyen, Junsin Yi, et al. Journal of Semiconductors, 2015, 36(2): 024007. doi: 10.1088/1674-4926/36/2/024007 |
9 |
Said Benramache, Foued Chabane, Boubaker Benhaoua, Fatima Z. Lemmadi Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001 |
10 |
Said Benramache, Okba Belahssen, Abderrazak Guettaf, Ali Arif Journal of Semiconductors, 2013, 34(11): 113001. doi: 10.1088/1674-4926/34/11/113001 |
11 |
Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad Aodong He, Bo Liu, Zhitang Song, Yegang Lü, Juntao Li, et al. Journal of Semiconductors, 2013, 34(7): 076002. doi: 10.1088/1674-4926/34/7/076002 |
12 |
Persistent photoconductivity in neutron irradiated GaN Minglan Zhang, Ruixia Yang, Naixin Liu, Xiaoliang Wang Journal of Semiconductors, 2013, 34(9): 093005. doi: 10.1088/1674-4926/34/9/093005 |
13 |
V.K. Dwivedi, P. Srivastava, G. Vijaya Prakash Journal of Semiconductors, 2013, 34(3): 033001. doi: 10.1088/1674-4926/34/3/033001 |
14 |
H-plasma-assisted aluminum induced crystallization of amorphous silicon Li Juan, Liu Ning, Luo Chong, Meng Zhiguo, Xiong Shaozhen, et al. Journal of Semiconductors, 2012, 33(6): 066003. doi: 10.1088/1674-4926/33/6/066003 |
15 |
M. R. Fadavieslam, N. Shahtahmasebi, M. Rezaee-Roknabadi, M. M. Bagheri-Mohagheghi Journal of Semiconductors, 2011, 32(11): 113002. doi: 10.1088/1674-4926/32/11/113002 |
16 |
Chen Wensuo, Zhang Bo, Li Zhaoji, Fang Jian, Guan Xu, et al. Journal of Semiconductors, 2010, 31(6): 064004. doi: 10.1088/1674-4926/31/6/064004 |
17 |
Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon Zhang Changsha, Zeng Xiangbo, Peng Wenbo, Shi Mingji, Liu Shiyong, et al. Journal of Semiconductors, 2009, 30(8): 083004. doi: 10.1088/1674-4926/30/8/083004 |
18 |
Structural and Optical Properties of Amorphous MCT Films Deposited by RF Magnetron Sputtering Kong Jincheng, Kong Lingde, Zhao Jun, Zhang Pengju, Li Hongzhi, et al. Journal of Semiconductors, 2008, 29(4): 733-736. |
19 |
Wu Xiaoli, Wang Nili, Zhang Kefeng, Tang Hengjing, Huang Yimin, et al. Chinese Journal of Semiconductors , 2007, 28(11): 1769-1772. |
20 |
Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN Su Zhiguo, Xu Jintong, Chen Jun, Li Xiangyang, Liu Ji, et al. Chinese Journal of Semiconductors , 2007, 28(6): 878-882. |
Article views: 4161 Times PDF downloads: 3827 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 20 October 2010 Online: Published: 01 March 2011
Citation: |
Qiu Feng, Xiang Jinzhong, Kong Jincheng, Yu Lianjie, Kong Lingde, Wang Guanghua, Li Xiongjun, Yang Lili, Li Cong, Ji Rongbin. Dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films[J]. Journal of Semiconductors, 2011, 32(3): 033004. doi: 10.1088/1674-4926/32/3/033004
****
Qiu F, Xiang J Z, Kong J C, Yu L J, Kong L D, Wang G H, Li X J, Yang L L, Li C, Ji R B. Dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films[J]. J. Semicond., 2011, 32(3): 033004. doi: 10.1088/1674-4926/32/3/033004.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2