J. Semicond. > 2011, Volume 32 > Issue 3 > 033006

SEMICONDUCTOR MATERIALS

Mass transport analysis of a showerhead MOCVD reactor

Li Hui

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DOI: 10.1088/1674-4926/32/3/033006

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Abstract: The mass transport process in a showerhead MOCVD reactor is mathematically analyzed. The mathematical analysis shows that the vertical component velocity of a point over the substrate is only dependent on vertical distance and is independent of radial distance. The boundary layer thickness in stagnation flow is independent of the radial position too. Due to the above features, the flow field suitable for film growth can be obtained. The ceiling height of the reactor has important effects on residence time and the mass transport process. The showerhead MOCVD reactor has a short residence time and diffusion plays an important role in axial transport, while both diffusion and convection are important in radial transport.

Key words: showerhead MOCVD reactormass transportmathematical analysis

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    Received: 18 August 2015 Revised: 04 October 2010 Online: Published: 01 March 2011

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      Li Hui. Mass transport analysis of a showerhead MOCVD reactor[J]. Journal of Semiconductors, 2011, 32(3): 033006. doi: 10.1088/1674-4926/32/3/033006 ****Li H. Mass transport analysis of a showerhead MOCVD reactor[J]. J. Semicond., 2011, 32(3): 033006. doi: 10.1088/1674-4926/32/3/033006.
      Citation:
      Li Hui. Mass transport analysis of a showerhead MOCVD reactor[J]. Journal of Semiconductors, 2011, 32(3): 033006. doi: 10.1088/1674-4926/32/3/033006 ****
      Li H. Mass transport analysis of a showerhead MOCVD reactor[J]. J. Semicond., 2011, 32(3): 033006. doi: 10.1088/1674-4926/32/3/033006.

      Mass transport analysis of a showerhead MOCVD reactor

      DOI: 10.1088/1674-4926/32/3/033006
      • Received Date: 2015-08-18
      • Accepted Date: 2010-08-11
      • Revised Date: 2010-10-04
      • Published Date: 2011-02-23

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