SEMICONDUCTOR DEVICES
Guo Weling, Jia Xuejiao, Yin Fei, Cui Bifeng, Gao Wei, Liu Ying and Yan Weiwei
Abstract: The high power light emitting diodes (LEDs) based on InGaN and AlGaInP individually are tested on line at temperatures from –30 to 100 ℃. The data are fitted to measure the relationship between temperature and the properties of forward voltage, relative light intensity, wavelength, and spectral bandwidth of two different kinds of LEDs. Why these properties changed and how these changes reflected on applications are also analyzed and compared with each other. The results show that temperature has a great influence on the performance and application of power LEDs. For applications at low temperature, the forward voltage rising and the peak wavelength blue-shifting must be considered; and at high temperature, the relative light intensity decreasing and the peak wavelength red-shifting must be considered.
Key words: power LEDs
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Received: 18 August 2015 Revised: 21 December 2010 Online: Published: 01 April 2011
| Citation: |
Guo Weling, Jia Xuejiao, Yin Fei, Cui Bifeng, Gao Wei, Liu Ying, Yan Weiwei. Characteristics of high power LEDs at high and low temperature[J]. Journal of Semiconductors, 2011, 32(4): 044007. doi: 10.1088/1674-4926/32/4/044007
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Guo W, Jia X J, Yin F, Cui B F, Gao W, Liu Y, Yan W W. Characteristics of high power LEDs at high and low temperature[J]. J. Semicond., 2011, 32(4): 044007. doi: 10.1088/1674-4926/32/4/044007.
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