| Citation: |
Li Ran, Huang Hui, Ren Xiaomin, Guo Jingwei, Liu Xiaolong, Huang Yongqing, Cai Shiwei. Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition[J]. Journal of Semiconductors, 2011, 32(5): 053003. doi: 10.1088/1674-4926/32/5/053003
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Li R, Huang H, Ren X M, Guo J W, Liu X L, Huang Y Q, Cai S W. Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition[J]. J. Semicond., 2011, 32(5): 053003. doi: 10.1088/1674-4926/32/5/053003.
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Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition
DOI: 10.1088/1674-4926/32/5/053003
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Abstract
Vertical p-type gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In the high II/III ratio range (II/III>9.1%), there exists a critical length beyond which kinking takes place. Two possible reasons are discussed. Zn occurrence in the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III = 0.2%, the doping concentration is about 8 × 1018 cm-3. -
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