Abstract: This paper describes an analytical model for the bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scatterings are included to analyze the full mobility model. Analytical explicit calculations of all the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with the numerically reported results and show good agreement.

Key words: Mobility, SiGe, strained –Si, Phonon, surface roughness, columbic, empirical