Abstract: Based on the platform of 0.35 μm PDSOI CMOS process technology, the partially depleted silicon-on-insulator dynamic threshold voltage (PDSOI DT) NMOS with an H-gate was implemented. The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and conventional H-gate NMOS were performed and compared. Furthermore, the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail. The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as V_gs = 0.7 V and V_ds = 1 V.

Key words: silicon-on-insulator, dynamic threshold voltage, analog and RF characteristics