| Citation: |
Chen Lei, Ruan Ying, Su Jie, Zhang Shulin, Shi Chunqi, Lai Zongsheng. A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design[J]. Journal of Semiconductors, 2011, 32(5): 055005. doi: 10.1088/1674-4926/32/5/055005
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Chen L, Ruan Y, Su J, Zhang S L, Shi C Q, Lai Z S. A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design[J]. J. Semicond., 2011, 32(5): 055005. doi: 10.1088/1674-4926/32/5/055005.
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Abstract
A fully monolithic power amplifier (PA) for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.-
Keywords:
- SiGe
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References
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Proportional views
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