J. Semicond. > 2011, Volume 32 > Issue 6 > 063002

SEMICONDUCTOR MATERIALS

Study of hybrid orientation structure wafer

Tan Kaizhou, Zhang Jing, Xu Shiliu, Zhang Zhengfan, Yang Yonghui, Chen Jun and Liang Tao

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DOI: 10.1088/1674-4926/32/6/063002

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Abstract: Two types of 5 μm thick hybrid orientation structure wafers, which were integrated by (110) or (100) orientation silicon wafers as the substrate, have been investigated for 15–40 V voltage ICs and MEMS sensor applications. They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique, and have been presented in China for the first time. The thickness of BOX SiO2 buried in wafer is 220 nm. It has been found that the quality of hybrid orientation structure with (100) wafer substrate is better than that with (110) wafer substrate by "Sirtl defect etching of HOSW".

Key words: HOTSOI(110) crystal orientation15–40 V ICsMEMS sensor

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    Received: 18 August 2015 Revised: 18 January 2011 Online: Published: 01 June 2011

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      Tan Kaizhou, Zhang Jing, Xu Shiliu, Zhang Zhengfan, Yang Yonghui, Chen Jun, Liang Tao. Study of hybrid orientation structure wafer[J]. Journal of Semiconductors, 2011, 32(6): 063002. doi: 10.1088/1674-4926/32/6/063002 ****Tan K Z, Zhang J, Xu S L, Zhang Z F, Yang Y H, Chen J, Liang T. Study of hybrid orientation structure wafer[J]. J. Semicond., 2011, 32(6): 063002. doi: 10.1088/1674-4926/32/6/063002.
      Citation:
      Tan Kaizhou, Zhang Jing, Xu Shiliu, Zhang Zhengfan, Yang Yonghui, Chen Jun, Liang Tao. Study of hybrid orientation structure wafer[J]. Journal of Semiconductors, 2011, 32(6): 063002. doi: 10.1088/1674-4926/32/6/063002 ****
      Tan K Z, Zhang J, Xu S L, Zhang Z F, Yang Y H, Chen J, Liang T. Study of hybrid orientation structure wafer[J]. J. Semicond., 2011, 32(6): 063002. doi: 10.1088/1674-4926/32/6/063002.

      Study of hybrid orientation structure wafer

      DOI: 10.1088/1674-4926/32/6/063002
      • Received Date: 2015-08-18
      • Accepted Date: 2010-09-14
      • Revised Date: 2011-01-18
      • Published Date: 2011-05-23

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