J. Semicond. > 2011, Volume 32 > Issue 6 > 064002

SEMICONDUCTOR DEVICES

A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature

Jia Kan, Sun Weifeng and Shi Longxing

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DOI: 10.1088/1674-4926/32/6/064002

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Abstract: A sub-circuit SPICE model of a MOSFET for low temperature operation is presented. Two resistors are introduced for the freeze-out effect, and the explicit behavioral models are developed for them. The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures.

Key words: SPICE modellow temperaturesub-circuitfreeze-out effectvoltage control resistor

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    Received: 18 August 2015 Revised: 14 February 2011 Online: Published: 01 June 2011

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      Jia Kan, Sun Weifeng, Shi Longxing. A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature[J]. Journal of Semiconductors, 2011, 32(6): 064002. doi: 10.1088/1674-4926/32/6/064002 ****Jia K, Sun W F, Shi L X. A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature[J]. J. Semicond., 2011, 32(6): 064002. doi: 10.1088/1674-4926/32/6/064002.
      Citation:
      Jia Kan, Sun Weifeng, Shi Longxing. A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature[J]. Journal of Semiconductors, 2011, 32(6): 064002. doi: 10.1088/1674-4926/32/6/064002 ****
      Jia K, Sun W F, Shi L X. A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature[J]. J. Semicond., 2011, 32(6): 064002. doi: 10.1088/1674-4926/32/6/064002.

      A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature

      DOI: 10.1088/1674-4926/32/6/064002
      • Received Date: 2015-08-18
      • Accepted Date: 2010-12-15
      • Revised Date: 2011-02-14
      • Published Date: 2011-05-23

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