| Citation: |
Cui Jiangwei, Yu Xuefeng, Ren Diyuan, He Chengfa, Gao Bo, Li Ming, Lu Jian. Double humps and radiation effects of SOI NMOSFET[J]. Journal of Semiconductors, 2011, 32(6): 064006. doi: 10.1088/1674-4926/32/6/064006
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Cui J W, Yu X F, Ren D Y, He C F, Gao B, Li M, Lu J. Double humps and radiation effects of SOI NMOSFET[J]. J. Semicond., 2011, 32(6): 064006. doi: 10.1088/1674-4926/32/6/064006.
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Abstract
Radiation experiments have been carried out with a SOI NMOSFET. The behavior of double humps was studied under irradiation. The characterization of the hump was demonstrated. The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed. In addition, the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.-
Keywords:
- SOI
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References
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Proportional views
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