SEMICONDUCTOR DEVICES
Abstract: ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si (111) substrates. The nanostructures have preferred orientation along the c axis. The nanostructures are about 10 to 20 nm thick and about 50 nm tall. The planar geometry photoconductive type metal–semiconductor–metal photodetector based on the ZnO nanowall networks exhibits a high and wide response spectrum, and no decrease from 250 to 360 nm. With the applied bias below 5 V, the dark current was below 6 μA, and the peak responsivity of 15 A/W was achieved at 360 nm. The UV (360 nm) to visible (450 nm) rejection ratio of around two orders could be extracted from the spectra response.
Key words: ZnO
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Cao Qiang, Liu Guolei, Deng Jiangxia, Xing Pengfei, Tian Yufeng, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 282-284. |
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Low Temperature Synthesis and Optical Properties of ZnO Nanowires Chang Peng, Liu Su, Chen Rongbo, Tang Ying, Han Genliang, et al. Chinese Journal of Semiconductors , 2007, 28(10): 1503-1507. |
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Received: 18 August 2015 Revised: 28 February 2011 Online: Published: 01 July 2011
| Citation: |
Su Shichen, Yang Xiaodong, Hu Candong. Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates[J]. Journal of Semiconductors, 2011, 32(7): 074008. doi: 10.1088/1674-4926/32/7/074008
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Su S C, Yang X D, Hu C and o N. Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates[J]. J. Semicond., 2011, 32(7): 074008. doi: 10.1088/1674-4926/32/7/074008.
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