SEMICONDUCTOR INTEGRATED CIRCUITS
Abstract: This paper presents the design and implementation of a monolithic CMOS DC–DC boost converter that is hardened for total dose radiation. In order to improve its radiation tolerant abilities, circuit-level and device-level RHBD (radiation-hardening by design) techniques were employed. Adaptive slope compensation was used to improve the inherent instability. The H-gate MOS transistors, annular gate MOS transistors and guard rings were applied to reduce the impact of total ionizing dose. A boost converter was fabricated by a standard commercial 0.35 μm CMOS process. The hardened design converter can work properly in a wide range of total dose radiation environments, with increasing total dose radiation. The efficiency is not as strongly affected by the total dose radiation and so does the leakage performance.
Key words: DC–DC power converter, boost converter, radiation-hardening by design, radiation hardened, total dose, 总剂量
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Received: 18 August 2015 Revised: 28 December 2010 Online: Published: 01 July 2011
| Citation: |
Liu Zhi, Ning Hongying, Yu Hongbo, Liu Youbao. Design of a total-dose radiation hardened monolithic CMOS DC–DC boost converter[J]. Journal of Semiconductors, 2011, 32(7): 075006. doi: 10.1088/1674-4926/32/7/075006
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Liu Z, Ning H Y, Yu H B, Liu Y B. Design of a total-dose radiation hardened monolithic CMOS DC–DC boost converter[J]. J. Semicond., 2011, 32(7): 075006. doi: 10.1088/1674-4926/32/7/075006.
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