| Citation: |
Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pang Lei, Liu Xinyu. A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J]. Journal of Semiconductors, 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001
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Ge Q, Chen X J, Luo W J, Yuan T T, Pang L, Liu X Y. A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J]. J. Semicond., 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001.
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A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier
DOI: 10.1088/1674-4926/32/8/085001
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Abstract
A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3 μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD. Over the 12–14 GHz frequency range, the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W), a peak power added efficiency (PAE) of 24.2% and linear gain of 6.4 to 7.5 dB under a 10% duty pulse condition when operated at Vds = 25 V and Vgs = –4 V. At these power levels, the amplifier exhibits a power density in excess of 5 W/mm.-
Keywords:
- Ku-band,
- AlGaN/GaN HEMTs,
- power amplifier,
- monolithic,
- power density
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] -
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