| Citation: |
Wang Honglai, Zhang Xiaoxing, Dai Yujie, Lü Yingjie, Toshimasa Matsuoka, Wang Jun, Kenji Taniguchi. A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs[J]. Journal of Semiconductors, 2011, 32(8): 085009. doi: 10.1088/1674-4926/32/8/085009
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Wang H L, Zhang X X, Dai Y J, Lü Y J, Toshimasa M, Wang J, Ken J T N G C. A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs[J]. J. Semicond., 2011, 32(8): 085009. doi: 10.1088/1674-4926/32/8/085009.
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A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs
DOI: 10.1088/1674-4926/32/8/085009
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Abstract
This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion, without the need for any bipolar transistors. The voltage reference is designed and fabricated by a 0.18 μm CMOS process. The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃ at a 0.8 V supply voltage over the temperature range of –35 to 85 ℃ and a 0.1% variation in supply voltage from 0.8 to 3 V. Furthermore, the supply current is only 1.5 μA at 0.8 V supply voltage.-
Keywords:
- bandgap reference,
- CMOS,
- subthreshold
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References
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