| Citation: |
Li Ting, Yan Jinliang, Ding Xingwei, Zhang Liying. Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2[J]. Journal of Semiconductors, 2012, 33(1): 013002. doi: 10.1088/1674-4926/33/1/013002
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Li T, Yan J L, Ding X W, Zhang L Y. Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2[J]. J. Semicond., 2012, 33(1): 013002. doi: 10.1088/1674-4926/33/1/013002.
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Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2
DOI: 10.1088/1674-4926/33/1/013002
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Abstract
ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering. The effect of substrate temperature on the structure, surface morphology, optical and electrical properties of ITO/Ga2O3 films was investigated by an X-ray diffractometer, a scanning electron microscope, a double beam spectrophotometer and the Hall system, respectively. The structural characteristics showed a dependence on substrate temperature. The resistivity of the films varied from 6.71 × 10-3 to 1.91 × 10-3 Ω·cm as the substrate temperature increased from 100 to 350 ℃. ITO (22 nm)/Ga2O3 (50 nm) films deposited at 300 ℃ exhibited a low sheet resistance of 373.3 Ω/□ and high deep ultraviolet transmittance of 78.97% at the wavelength of 300 nm. -
References
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