J. Semicond. > 2012, Volume 33 > Issue 1 > 014001

SEMICONDUCTOR DEVICES

Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects

Toufik Bentrcia, Faycal Djeffal and Abdel Hamid Benhaya

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DOI: 10.1088/1674-4926/33/1/014001

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Abstract: We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate (GS DG) MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage (I-V) model, derived based on both Poisson's and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions (subthreshold, linear and saturation) through a unique continuous expression. Therefore, the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.

Key words: GS DG MOSFEThot-carriers degradation effectscompact modelingpiece-wise models

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    Toufik Bentrcia, Faycal Djeffal, Abdel Hamid Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. Journal of Semiconductors, 2012, 33(1): 014001. doi: 10.1088/1674-4926/33/1/014001
    T Bentrcia, F Djeffal, A H Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. J. Semicond., 2012, 33(1): 014001. doi:  10.1088/1674-4926/33/1/014001.
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    Received: 03 December 2014 Revised: 05 September 2011 Online: Published: 01 January 2012

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      Toufik Bentrcia, Faycal Djeffal, Abdel Hamid Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. Journal of Semiconductors, 2012, 33(1): 014001. doi: 10.1088/1674-4926/33/1/014001 ****T Bentrcia, F Djeffal, A H Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. J. Semicond., 2012, 33(1): 014001. doi:  10.1088/1674-4926/33/1/014001.
      Citation:
      Toufik Bentrcia, Faycal Djeffal, Abdel Hamid Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. Journal of Semiconductors, 2012, 33(1): 014001. doi: 10.1088/1674-4926/33/1/014001 ****
      T Bentrcia, F Djeffal, A H Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. J. Semicond., 2012, 33(1): 014001. doi:  10.1088/1674-4926/33/1/014001.

      Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects

      DOI: 10.1088/1674-4926/33/1/014001
      • Received Date: 2014-12-03
      • Accepted Date: 2011-07-11
      • Revised Date: 2011-09-05
      • Published Date: 2011-12-28

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