Continuous analytic <i>I–V</i>  model for GS DG MOSFETs including hot-carrier degradation effects

Toufik Bentrcia; Faycal Djeffal; Abdel Hamid Benhaya

doi:10.1088/1674-4926/33/1/014001

J. Semicond. > 2012, Volume 33 > Issue 1 > 014001

SEMICONDUCTOR DEVICES

Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects

Toufik Bentrcia, Faycal Djeffal and Abdel Hamid Benhaya

+ Author Affiliations

DOI: 10.1088/1674-4926/33/1/014001

Abstract: We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate (GS DG) MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage (I-V) model, derived based on both Poisson's and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions (subthreshold, linear and saturation) through a unique continuous expression. Therefore, the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.

Key words: GS DG MOSFET, hot-carriers degradation effects, compact modeling, piece-wise models

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]

1	A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure C. Usha, P. Vimala Journal of Semiconductors, 2019, 40(12): 122901. doi: 10.1088/1674-4926/40/12/122901
2	Modeling and simulation of single-event effect in CMOS circuit Suge Yue, Xiaolin Zhang, Yuanfu Zhao, Lin Liu Journal of Semiconductors, 2015, 36(11): 111002. doi: 10.1088/1674-4926/36/11/111002
3	Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs Mini Bhartia, Arun Kumar Chatterjee Journal of Semiconductors, 2015, 36(4): 044003. doi: 10.1088/1674-4926/36/4/044003
4	Compact analytical model for single gate AlInSb/InSb high electron mobility transistors S. Theodore Chandra, N.B. Balamurugan, G. Subalakshmi, T. Shalini, G. Lakshmi Priya, et al. Journal of Semiconductors, 2014, 35(11): 114003. doi: 10.1088/1674-4926/35/11/114003
5	The storage lifetime model based on multi-performance degradation parameters Haochun Qi, Xiaoling Zhang, Xuesong Xie, Changzhi Lü Journal of Semiconductors, 2014, 35(10): 104012. doi: 10.1088/1674-4926/35/10/104012
6	Modeling the defect distribution and degradation of CdTe ultrathin films Nima E. Gorji Journal of Semiconductors, 2014, 35(12): 122001. doi: 10.1088/1674-4926/35/12/122001
7	Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects P. Vimala, N. B. Balamurugan Journal of Semiconductors, 2013, 34(11): 114001. doi: 10.1088/1674-4926/34/11/114001
8	A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, N Mohankumar, Chandan Kumar Sarkar, et al. Journal of Semiconductors, 2013, 34(11): 114002. doi: 10.1088/1674-4926/34/11/114002
9	Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects Santosh K. Gupta, Srimanta Baishya Journal of Semiconductors, 2013, 34(7): 074001. doi: 10.1088/1674-4926/34/7/074001
10	On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile Sarvesh Dubey, Kumar Tiwari, S. Jit Journal of Semiconductors, 2013, 34(5): 054001. doi: 10.1088/1674-4926/34/5/054001
11	Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs Lü Weifeng, Sun Lingling Journal of Semiconductors, 2011, 32(8): 084003. doi: 10.1088/1674-4926/32/8/084003
12	Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing Liu Jun, Sun Lingling, Marissa Condon Journal of Semiconductors, 2011, 32(12): 124002. doi: 10.1088/1674-4926/32/12/124002
13	RF CMOS modeling: a scalable model of RF-MOSFET with different numbers of fingers Yu Yuning, Sun Lingling, Liu Jun Journal of Semiconductors, 2010, 31(11): 114007. doi: 10.1088/1674-4926/31/11/114007
14	Hot carrier effects of SOI NMOS Chen Jianjun, Chen Shuming, Liang Bin, Liu Biwei, Liu Zheng, et al. Journal of Semiconductors, 2010, 31(7): 074006. doi: 10.1088/1674-4926/31/7/074006
15	Testing content addressable memories with physical fault models Ma Lin, Yang Xu, Zhong Shiqiang, Chen Yunji Journal of Semiconductors, 2009, 30(8): 085001. doi: 10.1088/1674-4926/30/8/085001
16	Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs Li Meng, Yu Zhiping Chinese Journal of Semiconductors , 2007, 28(11): 1717-1721.
17	The Usage of Two Dielectric Function Models Chen Hong, Shen Wenzhong Chinese Journal of Semiconductors , 2006, 27(4): 583-590.
18	BSIM Model Research and Recent Progress He Jin, Chan Mansun, Xi Xuemei, Wan Hui, Pin Su, et al. Chinese Journal of Semiconductors , 2006, 27(3): 388-396.
19	A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs He Jin, Tao Yadong, Bian Wei, Liu Feng, Niu Xudong, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 242-247.
20	Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects Zhang Dawei, Tian Lilin，and Yu Zhiping Chinese Journal of Semiconductors , 2005, 26(3): 429-435.

Search

GET CITATION

Toufik Bentrcia, Faycal Djeffal, Abdel Hamid Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. Journal of Semiconductors, 2012, 33(1): 014001. doi: 10.1088/1674-4926/33/1/014001

T Bentrcia, F Djeffal, A H Benhaya. Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects[J]. J. Semicond., 2012, 33(1): 014001. doi: 10.1088/1674-4926/33/1/014001.

Export: BibTex EndNote

Article Metrics

Article views: 4021 Times PDF downloads: 1878 Times Cited by: 0 Times

History

Received: 03 December 2014 Revised: 05 September 2011 Online: Published: 01 January 2012

We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate (GS DG) MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage (I-V) model, derived based on both Poisson's and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions (subthreshold, linear and saturation) through a unique continuous expression. Therefore, the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.

Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects

DOI: 10.1088/1674-4926/33/1/014001

Abstract

References

Proportional views

Catalog

Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects

DOI: 10.1088/1674-4926/33/1/014001

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content