J. Semicond. > 2012, Volume 33 > Issue 10 > 102004

SEMICONDUCTOR PHYSICS

Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath

Wang Wei, Wang Jing, Zhao Mei, Liang Renrong and Xu Jun

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DOI: 10.1088/1674-4926/33/10/102004

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Abstract: Insertion of a C-containing layer in a metal/Ge structure, using a chemical bath, enabled the Schottky barrier height (SBH) to be modulated. Chemical baths with 1-octadecene, 1-hexadecene, 1-tetradecene, and 1-dodecene were used separately with Ge substrates. An ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge. Metal-induced gap states are alleviated and the pinned Fermi level is released. The SBH is lowered to 0.17 eV. This new formation method is much less complex than traditional ones, and the result is very good.

Key words: Schottky barrier

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    Received: 20 August 2015 Revised: 17 May 2012 Online: Published: 01 October 2012

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      Wang Wei, Wang Jing, Zhao Mei, Liang Renrong, Xu Jun. Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath[J]. Journal of Semiconductors, 2012, 33(10): 102004. doi: 10.1088/1674-4926/33/10/102004 ****Wang W, Wang J, Zhao M, Liang R R, Xu J. Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath[J]. J. Semicond., 2012, 33(10): 102004. doi: 10.1088/1674-4926/33/10/102004.
      Citation:
      Wang Wei, Wang Jing, Zhao Mei, Liang Renrong, Xu Jun. Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath[J]. Journal of Semiconductors, 2012, 33(10): 102004. doi: 10.1088/1674-4926/33/10/102004 ****
      Wang W, Wang J, Zhao M, Liang R R, Xu J. Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath[J]. J. Semicond., 2012, 33(10): 102004. doi: 10.1088/1674-4926/33/10/102004.

      Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath

      DOI: 10.1088/1674-4926/33/10/102004
      Funds:

      The National High Technology Research and Development Program of China (863 Program)

      The National Basic Research Program of China (973 Program)

      • Received Date: 2015-08-20
      • Accepted Date: 2012-03-31
      • Revised Date: 2012-05-17
      • Published Date: 2012-09-10

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