J. Semicond. > 2012, Volume 33 > Issue 10 > 103001

SEMICONDUCTOR MATERIALS

Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy

Zhang Dongyan, Zheng Xinhe, Li Xuefei, Wu Yuanyuan, Wang Jianfeng and Yang Hui

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DOI: 10.1088/1674-4926/33/10/103001

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Abstract: High-quality In0.2Ga0.8N epilayers were grown on a GaN template at temperatures of 520 and 580℃ via plasma-assisted molecular beam epitaxy. The X-ray rocking curve full widths at half maximum (FWHM) of (10.2) reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature. When the growth temperature increases to 580℃, the FWHM of (00.2) reflections for these samples is very narrow and keeps similar, while significant improvement of (10.2) reflections with an FWHM value of 612 arcsec has been observed. This improved quality in InGaN layers grown at 580℃ is also reflected by the much larger size of the crystalline column from the AFM results, stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.

Key words: InGaNPA-MBEqualitysolar cells

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    Received: 03 December 2014 Revised: 11 April 2012 Online: Published: 01 October 2012

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      Zhang Dongyan, Zheng Xinhe, Li Xuefei, Wu Yuanyuan, Wang Jianfeng, Yang Hui. Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy[J]. Journal of Semiconductors, 2012, 33(10): 103001. doi: 10.1088/1674-4926/33/10/103001 ****Zhang D Y, Zheng X H, Li X F, Wu Y Y, Wang J F, Yang H. Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy[J]. J. Semicond., 2012, 33(10): 103001. doi: 10.1088/1674-4926/33/10/103001.
      Citation:
      Zhang Dongyan, Zheng Xinhe, Li Xuefei, Wu Yuanyuan, Wang Jianfeng, Yang Hui. Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy[J]. Journal of Semiconductors, 2012, 33(10): 103001. doi: 10.1088/1674-4926/33/10/103001 ****
      Zhang D Y, Zheng X H, Li X F, Wu Y Y, Wang J F, Yang H. Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy[J]. J. Semicond., 2012, 33(10): 103001. doi: 10.1088/1674-4926/33/10/103001.

      Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy

      DOI: 10.1088/1674-4926/33/10/103001
      • Received Date: 2014-12-03
      • Accepted Date: 2012-03-04
      • Revised Date: 2012-04-11
      • Published Date: 2012-09-10

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