| Citation: |
Wang Xinjian, Song Hang, Li Zhiming, Jiang Hong, Li Dabing, Miao Guoqing, Chen Yiren, Sun Xiaojuan. An aluminum nitride photoconductor for X-ray detection[J]. Journal of Semiconductors, 2012, 33(10): 103002. doi: 10.1088/1674-4926/33/10/103002
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Wang X J, Song H, Li Z M, Jiang H, Li D B, Miao G Q, Chen Y R, Sun X J. An aluminum nitride photoconductor for X-ray detection[J]. J. Semicond., 2012, 33(10): 103002. doi: 10.1088/1674-4926/33/10/103002.
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Abstract
An AlN photoconductor for X-ray detection has been fabricated, and its response to X-ray irradiation intensity is studied. The photoconductor has a very low leakage current, less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation. The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity, and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor. By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed, and a reasonable interpretation of the physical mechanism is obtained.-
Keywords:
- AlN photoconductor,
- X-ray detection,
- recombination
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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