| Citation: |
Peng Yangyang, Lu Kejie, Sui Wenquan. A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology[J]. Journal of Semiconductors, 2012, 33(10): 105001. doi: 10.1088/1674-4926/33/10/105001
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Peng Y Y, Lu K J, Sui W Q. A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology[J]. J. Semicond., 2012, 33(10): 105001. doi: 10.1088/1674-4926/33/10/105001.
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A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology
DOI: 10.1088/1674-4926/33/10/105001
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Abstract
A two-stage 2.5-5 GHz monolithic low-noise amplifier (LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology. To achieve wide operation bandwidth and low noise figure, the proposed LNA uses a wideband matching network and a negative feedback technique. Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain. The input and output return loss exceeded -10-dB across the band. The power consumption of this LNA is 33 mW. According to the author's knowledge, this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.-
Keywords:
- LNA
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] -
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