J. Semicond. > 2012, Volume 33 > Issue 10 > 105007

SEMICONDUCTOR INTEGRATED CIRCUITS

A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique

Han Benguang, Guo Zhongjie, Wu Longsheng and Liu Youbao

+ Author Affiliations
DOI: 10.1088/1674-4926/33/10/105007

PDF

Abstract: A radiation-hardened-by-design phase-locked loop (PLL) with a frequency range of 200 to 1000 MHz is proposed. By presenting a novel charge compensation circuit, composed by a lock detector circuit, two operational amplifiers, and four MOS devices, the proposed PLL significantly reduces the recovery time after the presence of a single event transient (SET). Comparing with many traditional hardened methods, most of which endeavor to enhance the immunity of the charge pump output node to an SET, the novel PLL can also decrease its susceptibility in the presence of an SET in other blocks. A novel system model is presented to describe immunity of a PLL to an SET and used to compare the sensitivity of traditional and hardened PLLs to an SET. An SET is simulated on Sentaurus TCAD simulation workbench to model the induced pulse current. Post simulation with a 130 nm CMOS process model shows that the recovery time of the proposed PLL reduces by up to 93.5% compared with the traditional one, at the same time, the charge compensation circuit adds no complexity to the systemic parameter design.

Key words: phase-locked-loop

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3670 Times PDF downloads: 1701 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: 17 May 2012 Online: Published: 01 October 2012

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Han Benguang, Guo Zhongjie, Wu Longsheng, Liu Youbao. A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique[J]. Journal of Semiconductors, 2012, 33(10): 105007. doi: 10.1088/1674-4926/33/10/105007 ****Han B G, Guo Z J, Wu L S, Liu Y B. A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique[J]. J. Semicond., 2012, 33(10): 105007. doi: 10.1088/1674-4926/33/10/105007.
      Citation:
      Han Benguang, Guo Zhongjie, Wu Longsheng, Liu Youbao. A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique[J]. Journal of Semiconductors, 2012, 33(10): 105007. doi: 10.1088/1674-4926/33/10/105007 ****
      Han B G, Guo Z J, Wu L S, Liu Y B. A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique[J]. J. Semicond., 2012, 33(10): 105007. doi: 10.1088/1674-4926/33/10/105007.

      A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique

      DOI: 10.1088/1674-4926/33/10/105007
      Funds:

      National Defense Pre-research Project

      • Received Date: 2015-08-20
      • Accepted Date: 2012-03-24
      • Revised Date: 2012-05-17
      • Published Date: 2012-09-10

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return