| Citation: |
Zhao Jianyi, Guo Jian, Huang Xiaodong, Zhou Ning, Liu Wen. Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP[J]. Journal of Semiconductors, 2012, 33(10): 106001. doi: 10.1088/1674-4926/33/10/106001
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Zhao J Y, Guo J, Huang X D, Zhou N, Liu W. Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP[J]. J. Semicond., 2012, 33(10): 106001. doi: 10.1088/1674-4926/33/10/106001.
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Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP
doi: 10.1088/1674-4926/33/10/106001
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Abstract
This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology. The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios. With an optimal condition including ICP-RIE etching depth, SiO2 deposition, and RTA process, five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample. The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.-
Keywords:
- inductively coupled plasma
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] -
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