| Citation: |
Li Ning, Chen Nuofu, Bai Yiming, He Haiyang. Preparation and properties of polycrystalline silicon seed layers on graphite substrate[J]. Journal of Semiconductors, 2012, 33(11): 113003. doi: 10.1088/1674-4926/33/11/113003
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Li N, Chen N F, Bai Y M, He H Y. Preparation and properties of polycrystalline silicon seed layers on graphite substrate[J]. J. Semicond., 2012, 33(11): 113003. doi: 10.1088/1674-4926/33/11/113003.
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Preparation and properties of polycrystalline silicon seed layers on graphite substrate
DOI: 10.1088/1674-4926/33/11/113003
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Abstract
Polycrystalline silicon (poly-Si) seed layers were fabricated on graphite substrates by magnetron sputtering. It was found that the substrate temperature in the process of magnetron sputtering had an important effect on the crystalline quality, and 700 ℃ was the critical temperature in the formation of Si (220) preferred orientation. When the substrate temperature is higher than 700 ℃, the peak intensity of X-ray diffraction (XRD) from Si (220) increases distinctly with the increasing of substrate temperature. Moreover, the XRD measurements indicate that the structural property and crystalline quality of poly-Si seed layers are determined by the rapid thermal annealing (RTA) temperatures and time. Specifically, a higher annealing temperature and a longer annealing time could enhance the Si (220) preferred orientation of poly-Si seed layers. -
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