J. Semicond. > 2012, Volume 33 > Issue 11 > 114003
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SEMICONDUCTOR DEVICES

A new short-anoded IGBT with high emission efficiency

Chen Weizhong, Zhang Bo, Li Zehong, Ren Min and Li Zhaoji

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DOI: 10.1088/1674-4926/33/11/114003

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Abstract: A novel short-anoded insulated-gate bipolar transistor (SA-IGBT) with double emitters is proposed. At the on-state, the new structure shows extraordinarily high emission efficiency. Moreover, with a short-contacted anode, it further enhances the hole emission efficiency because of the crowding of the electrons. The forward voltage drop VF of this structure is 1.74 V at a current density 100 of A/cm2. Compared to the conventional NPT IGBT (1.94 V), segment-anode IGBT (SA-NPN 2.1 V), and conventional SA-IGBT (2.33 V), VF decreased by 10%, 17% and 30%, respectively. Furthermore, no NDR has been detected comparing to the SA-IGBT. At the off-state, there is a channel for extracting excessive carriers in the drift region. The turn-off loss Eoff of this proposed structure is 8.64 mJ/cm2. Compared to the conventional NPT IGBT (15.3 mJ/cm2), SA-NPN IGBT (12.8 mJ/cm2), and SA-IGBT (12.1 mJ/cm2), Eoff decreased by 43.7%, 32% and 28%, respectively.

Key words: short-anode insulated-gate bipolar transistor, snapback, turn-off, tradeoff

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    Received: 20 August 2015 Revised: 10 May 2012 Online: Published: 01 November 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(11): 114003
      Chen Weizhong, Zhang Bo, Li Zehong, Ren Min, Li Zhaoji. A new short-anoded IGBT with high emission efficiency[J]. Journal of Semiconductors, 2012, 33(11): 114003. doi: 10.1088/1674-4926/33/11/114003 ****Chen W Z, Zhang B, Li Z H, Ren M, Li Z J. A new short-anoded IGBT with high emission efficiency[J]. J. Semicond., 2012, 33(11): 114003. doi: 10.1088/1674-4926/33/11/114003.
      Citation:
      Chen Weizhong, Zhang Bo, Li Zehong, Ren Min, Li Zhaoji. A new short-anoded IGBT with high emission efficiency[J]. Journal of Semiconductors, 2012, 33(11): 114003. doi: 10.1088/1674-4926/33/11/114003 ****
      Chen W Z, Zhang B, Li Z H, Ren M, Li Z J. A new short-anoded IGBT with high emission efficiency[J]. J. Semicond., 2012, 33(11): 114003. doi: 10.1088/1674-4926/33/11/114003.
      shu

      A new short-anoded IGBT with high emission efficiency

      DOI: 10.1088/1674-4926/33/11/114003

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      Funds:

      Science Foundation of China under Projects 60806025 and 61076082

      • Received Date: 2015-08-20
      • Accepted Date: 2012-04-11
      • Revised Date: 2012-05-10
      • Published Date: 2012-10-23

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