J. Semicond. > 2012, Volume 33 > Issue 11 > 114005
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SEMICONDUCTOR DEVICES

12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator

Chen Hongtao, Ding Jianfeng and Yang Lin

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DOI: 10.1088/1674-4926/33/11/114005

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Abstract: We demonstrate a 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator. Under a non-return-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V, the eye is clearly opened with an extinction ratio of 8.4 dB. The device exhibits high modulation efficiency, with a figure of merit VπL of 0.036 V·mm.

Key words: optical modulator

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    History

    Received: 21 August 2015 Revised: 11 June 2012 Online: Published: 01 November 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(11): 114005
      Chen Hongtao, Ding Jianfeng, Yang Lin. 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator[J]. Journal of Semiconductors, 2012, 33(11): 114005. doi: 10.1088/1674-4926/33/11/114005 ****Chen H T, Ding J F, Yang L. 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator[J]. J. Semicond., 2012, 33(11): 114005. doi: 10.1088/1674-4926/33/11/114005.
      Citation:
      Chen Hongtao, Ding Jianfeng, Yang Lin. 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator[J]. Journal of Semiconductors, 2012, 33(11): 114005. doi: 10.1088/1674-4926/33/11/114005 ****
      Chen H T, Ding J F, Yang L. 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator[J]. J. Semicond., 2012, 33(11): 114005. doi: 10.1088/1674-4926/33/11/114005.
      shu

      12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator

      DOI: 10.1088/1674-4926/33/11/114005

      • State Key Laboratory on Integrated Optoelectronics & Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • State Key Laboratory on Integrated Optoelectronics & Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • State Key Laboratory on Integrated Optoelectronics & Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-21
      • Accepted Date: 2012-05-02
      • Revised Date: 2012-06-11
      • Published Date: 2012-10-23

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