| Citation: |
Wang Chenwei, Liu Yuling, Tian Jianying, Niu Xinhuan, Zheng Weiyan, Yue Hongwei. Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP[J]. Journal of Semiconductors, 2012, 33(11): 116001. doi: 10.1088/1674-4926/33/11/116001
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Wang C W, Liu Y L, Tian J Y, Niu X H, Zheng W Y, Yue H W. Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP[J]. J. Semicond., 2012, 33(11): 116001. doi: 10.1088/1674-4926/33/11/116001.
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Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP
DOI: 10.1088/1674-4926/33/11/116001
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Abstract
The chemical mechanical polishing/planarization (CMP) performance of an inhibitor-free alkaline copper slurry is investigated. The results of the Cu dissolution rate (DR) and the polish rate (PR) show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate. Although the slurry with inhibitors has a somewhat low DR, the copper removal rate was significantly reduced due to the addition of inhibitors (Benzotriazole, BTA). The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy; it can planarize the uneven patterned surface during the excess copper removal. These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers, it can be applied in the first step of Cu CMP for copper bulk removal. -
References
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