J. Semicond. > 2012, Volume 33 > Issue 12 > 125010

SEMICONDUCTOR INTEGRATED CIRCUITS

A process/temperature variation tolerant RSSI

Lei Qianqian, Lin Min and Shi Yin

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DOI: 10.1088/1674-4926/33/12/125010

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Abstract: A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within ±0.5 dB for an input power from -65 to -8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA (I and Q paths) from a 1.2 V single supply.

Key words: limiterRSSIAGCtemperature compensation

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    Received: 21 August 2015 Revised: 25 June 2012 Online: Published: 01 December 2012

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      Lei Qianqian, Lin Min, Shi Yin. A process/temperature variation tolerant RSSI[J]. Journal of Semiconductors, 2012, 33(12): 125010. doi: 10.1088/1674-4926/33/12/125010 ****Lei Q Q, Lin M, Shi Y. A process/temperature variation tolerant RSSI[J]. J. Semicond., 2012, 33(12): 125010. doi: 10.1088/1674-4926/33/12/125010.
      Citation:
      Lei Qianqian, Lin Min, Shi Yin. A process/temperature variation tolerant RSSI[J]. Journal of Semiconductors, 2012, 33(12): 125010. doi: 10.1088/1674-4926/33/12/125010 ****
      Lei Q Q, Lin M, Shi Y. A process/temperature variation tolerant RSSI[J]. J. Semicond., 2012, 33(12): 125010. doi: 10.1088/1674-4926/33/12/125010.

      A process/temperature variation tolerant RSSI

      DOI: 10.1088/1674-4926/33/12/125010
      • Received Date: 2015-08-21
      • Accepted Date: 2012-05-03
      • Revised Date: 2012-06-25
      • Published Date: 2012-11-13

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