Citation: |
Lei Qianqian, Lin Min, Shi Yin. A process/temperature variation tolerant RSSI[J]. Journal of Semiconductors, 2012, 33(12): 125010. doi: 10.1088/1674-4926/33/12/125010
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Lei Q Q, Lin M, Shi Y. A process/temperature variation tolerant RSSI[J]. J. Semicond., 2012, 33(12): 125010. doi: 10.1088/1674-4926/33/12/125010.
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Abstract
A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within ±0.5 dB for an input power from -65 to -8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA (I and Q paths) from a 1.2 V single supply.-
Keywords:
- limiter,
- RSSI,
- AGC,
- temperature compensation
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References
[1] [2] [3] [4] [5] [6] [7] [8] -
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